|
Features of the Current Flow in Injection Structures Based on PbSnTe:In Films |
D. V. Ishchenko
/
I.G. Neizvestny
/
N.S. Pashchin
/
V. N. Sherstyakova
|
Pages 3-6 |
A Thin-Film Platform for Chemical Gas Sensors |
I. V. Roslyakov
/
K. S. Napolskii
/
V. S. Stolyarov
/
E. E. Karpov
/
A.V. Ivashev
/
V. N. Surtaev
|
Pages 7-15 |
|
Structuring Copper in the Plasma Medium of a High-Frequency Discharge |
A. V. Dunaev
/
D. B. Murin
|
Pages 16-20 |
On the Effect of the Ratio of Concentrations of Fluorocarbon Components in a CF4 + C4F8 + Ar Mixture on the Parameters of Plasma and SiO2/Si Etching Selectivity |
A. Efremov
/
Kwon K.-H.
/
D. B. Murin
|
Pages 21-27 |
The Effect of the Mixture Composition on the Electrophysical Parameters of HCl/N2 Plasma |
S.A. Pivovarenok
|
Pages 28-31 |
|
Effect of the Distribution of the Radiation Defect on the Field-Emission Properties of Silicon Crystals |
R. K. Yafarov
/
V. P. Timoshenkov
|
Pages 32-39 |
|
Simulation of the Characteristics of Double-Gate Asymmetrically Doped SOI CMOS Nanotransistors |
N. V. Masalsky
|
Pages 40-48 |
|
Quantum Gates with Spin States in Continuous Microwave Field |
A. F. Zinovieva
/
A. V. Dvurechenskii
/
A. Yu. Gornov
/
T. S. Zarodnyuk
/
A. A. Koshkarev
/
A. V. Nenashev
|
Pages 49-58 |