Control of the relief of the substrate SI (001) during thermal annealing in a vacuum chamber

 
PIIS054412690002766-9-1
DOI10.31857/S054412690002766-9
Publication type Article
Status Published
Authors
Affiliation: Institute of Semiconductor Physics. A.V. Rzhanova, Siberian Branch of the Russian Academy of Sciences
Address: Russian Federation
Affiliation: Institute of Semiconductor Physics. A.V. Rzhanova, Siberian Branch of the Russian Academy of Sciences
Address: Russian Federation
Affiliation: Institute of Semiconductor Physics. A.V. Rzhanova, Siberian Branch of the Russian Academy of Sciences
Address: Russian Federation
Affiliation: Novosibirsk State University
Address: Russian Federation
Journal nameMikroelektronika
EditionVolume 47 6
Pages407-413
Abstract

  

Keywords
Received08.12.2018
Publication date08.12.2018
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1. Misbah S., Pierre-Louis O., Saito Y. Crystal surfaces in and out of equilibrium: A modern view // Rev. Mod. Phys. 2010. V. 82. P. 981–1040.

2. Latyshev A. V., Litvin L. V., Aseev A. L. Peculiarities of step bunching on Si(001) surface induced by DC heating // Appl. Surf. Sci. 1998. V. 130–132. R. 139– 145.

3. Gibbons B. J., Nofsinger J., Pelz J. P. Influence of Si deposition on the electromigtation induced step bunching instability on Si(111) // Surf. Sci. 2005. V. 575. P. L51–L56.

4. Rodyakina E. E., Kosolobov S. S., Latyshev A. V. Drejf adatomov kremniya v usloviyakh ehlektromigratsii // Pis'ma v ZhEh TF. 2011. T. 94/2. S. 151– 156.

5. Gibbons B. J., Nofsinger J., Pelz J. P. Influence of Si deposition on the electromigtation induced step bunching instability on Si(111) // Surf. Sci. 2005. V. 575. P. L51–L56.

6. Rodyakina E. E., Kosolobov S. S., Latyshev A. V. Ehlektromigratsiya adatomov kremniya na poverkhnosti kremniya (111) // Vestnik NGU: Seriya “Fizika”. 2011. № 6. V. 2. S. 65–76.

7. Nielsen J., Pelz J. P., Hibino H. Hu C.-W., Tsong I. S.T. Enhanced terrace stability for Preparation of step-free Si(001)-(2kh1) // Phys. Rev. Lett. 2001. V. 87. P. 136103

8. Sato M., Uwaha M., Saito Y. Evaporation and impigment effects on drift-induced step instabilities on a Si(001) vicinal face // Phys. Rev. B. 2005. V. 72. P. 045401.

9. Latyshev A. V., Krasilnikov A. B., Aseev A. L. In situ REM study of monoatomic step behaviour on the Si(111) surface during sublimation // Ultramicroscopy. 1993. V. 48. № 4. P. 377–380.

10. Latyshev A. V. Atomnye stupeni na poverkhnosti kremniya v protsessakh sublimatsii, ehpitaksii i fazovykh perekhodov // Dis. ... d-ra fiz.-mat. nauk. 1996.

11. Rodyakina E. E., Kosolobov S. S., Sheglov D.V., Nasimov D. A., Se Ahn Song, Latyshev A. V. Atomic steps on sublimating Si(001) surface observed by atomic force microscopy // Physics of Low Dimensional Structures. 2004. V. 1/2. P. 9–18.

12. Popkov V., Krug J. Dynamic phase transitions in electromigration-induced step bunching // Phys. Rev. B. 2006. V. 73. P. 235430.

13. Liu D. J., Weeks J. D. Quantitative theory of currentinduced step bunching on Si(111) // Phys. Rev. B. 1998. V. 57. № 23. P. 14891–14899.

14. Frish T., Verga A. Kinetic step bunching instability during surface growth // Phys. Rev. Lett. 2005. V. 94. P. 226102.

15. Krug J., Tonchev V., Stoyanov S., Pimpinelli A.. Scaling properties of step bunches induced by sublimation and related mechanisms // Phys. Rev. B. (2005). V. 71. P. 045412.

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