Modeling the dynamics of the integral dielectric constant of a porous low-k organosilicate film with dry etching of photoresist in O2 plasma

 
PIIS054412690002772-6-1
DOI10.31857/S054412690002772-6
Publication type Article
Status Published
Authors
Affiliation: Moscow Institute of Physics and Technology (State University)
Address: Russian Federation
Affiliation: Moscow Institute of Physics and Technology (State University)
Address: Russian Federation
Affiliation: Joint-stock company “Research Institute of Molecular Electronics”
Address: Russian Federation
Affiliation: National Research University “Moscow Institute of Electronic Engineering”
Address: Russian Federation
Journal nameMikroelektronika
EditionVolume 47 6
Pages451-459
Abstract

  

Keywords
Received08.12.2018
Publication date08.12.2018
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