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Investigation of fused ohmic contacts to epitaxial layers of gallium arsenide alloyed by tellurium
 
PIIS054412690002769-2-1
DOI10.31857/S054412690002769-2
Publication type Article
Status Published
Authors
A. Nezhentsev 
Affiliation: Moscow Institute of Electronic Technology
Address: Russian Federation
V. Egorkin
Affiliation: Moscow Institute of Electronic Technology
Address: Russian Federation
V. Zemlyakov
Affiliation: Moscow Institute of Electronic Technology
Address: Russian Federation
V. Garmash
Affiliation: Moscow Institute of Electronic Technology
Address: Russian Federation
N. Kaluzhny
Affiliation: PTI them. A.F. Ioffe
Address: Russian Federation
S. Mintairov
Affiliation: PTI them. A.F. Ioffe
Address: Russian Federation
Journal nameMikroelektronika
EditionVolume 47 6
Pages431-435
Abstract

  

Keywords
Received08.12.2018
Publication date08.12.2018
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