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| Implementation of a Two-Qubit C-NOT Quantum Gate in a System of Two Double Quantum Dots, a Microcavity, and a Laser |
V. G. Chekmachev
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A. V. Tsukanov
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Pages 3-13 |
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| Analytic Model of Transit-Time Diodes and Transistors for the Generation and Detection of THz Radiation |
V. V. Vyurkov
/
K. V. Rudenko
/
M. K. Rudenko
/
I. A. Semenikhin
/
A. B. Nemtsov
/
R. R. Khabutdinov
/
V. F. Lukichev
|
Pages 14-21 |
| Investigation of a Capacitor Array of a Composite Capacitive Touch Panel |
D. S. Terent’ev
/
V. A. Shakhnov
/
A. I. Vlasov
/
A. I. Krivoshein
|
Pages 22-29 |
| Investigation of Characteristics of Electrostatically Actuated MEMS Switch with an Active Contact Breaking Mechanism |
I. V. Uvarov
/
A. N. Kupriyanov
|
Pages 30-37 |
| Reliability Investigation of 0.18-μm SOI MOS Transistors at High Temperatures |
A. S. Benediktov
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A. G. Potupchik
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A. A. Mikhailov
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P. V. Ignatov
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Pages 38-43 |
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| Investigation of the Process of Plasma Through Etching of HkMG Stack of Nanotransistor with a 32-nm Critical Dimension |
A. V. Myakonkikh
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K. Yu. Kuvaev
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A. A. Tatarintsev
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N. A. Orlikovskii
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K. V. Rudenko
/
O. P. Guschin
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E. S. Gornev
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Pages 44-50 |
| Applications of the Technology of Fast Neutral Particle Beams in Micro- and Nanoelectronics |
V. P. Kudrya
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Yu. P. Maishev
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Pages 51-63 |
| The Model of the Process of the Chemical Mechanical Polishing of the Copper Metallization, Based on the Formation of the Passivation Layer |
M. E. Sarychev
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T. M. Makhviladze
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Pages 64-73 |
| Nanosecond-Pulse Annealing of Heavily Doped Ge:Sb Layers on Ge Substrates |
R. I. Batalov
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R. M. Bayazitov
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H. A. Novikov
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I. A. Faizrakhmanov
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V. A. Shustov
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G. D. Ivlev
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Pages 74-82 |
