1. Miyoshi T., Masui S., Okada T. et al. 510–515 nm In-GaN-based green laser diodes on C-plane GaN substrate. Applied Physics Express, 2009, vol. 2, no. 6, 062201. Doi: 10.1143/APEX.2.062201.
2. Cich M.J., Aldaz R.I., Chakraborty A. et al. Bulk GaN based violet light-emitting diodes with high efficiency at very high current density. Applied Physics Letters, 2012, vol. 101, no. 22, 223509. Doi: 10.1063/1.4769228.
3. Nie H., Diduck Q., Alvarez B. et al. 1.5-kV and 2.2- mOhm-cm2 Vertical GaN Transistors on Bulk-GaN Substrates. IEEE Electron Device Letters, 2014, vol. 35, no 9, pp. 939–941.
4. Fujikura H., Yoshida T., Shibata M., Otoki Y. Recent
progress of high-quality GaN substrates by HVPE method. Proceedings of "Gallium Nitride Materials and Devices XII". International Society for Optics and Photonics, 2017, vol. 10104, 1010403. Doi: 10.1117/12.2257202.
5. Mori Y., Imade M., Maruyama M, Yoshimura M. Growth of GaN crystals by Na flux method. ECS Journal of Solid State Science and Technology, 2013, vol. 2, no. 8, pp. N3068–N3071. Doi: 0.1149/2.015308jss.
6. Kucharski R., Zając M., Doradziński R. et al. Non-polar and semi-polar ammonothermal GaN substrates. Semiconductor Science and Technology, 2012, vol. 27, no. 2, 024007. Doi: 10.1088/0268-1242/27/2/024007.
7. Bockowski M., Iwinska M., Amilusik M. et al. Challenges and future perspectives in HVPE-GaN growth on ammonothermal GaN seeds. Semiconductor Science and Technology, 2016, vol. 31, no. 9, 093002. Doi: 10.1088/0268-1242/31/9/093002.