views: 994
Readers community rating: votes 0
1. Yoda H. MRAM Fundamentals and Devices // Handbook of Spintronics. Edited Yongbing Xu, David D. Awschalom, Junsaku Nitta. Springer Reference: Heidelberg-New York-London. 2016. P. 1031–1064.
2. Zaleski A. et al. The study of conductance in magnetic tunnel junctions with a thin MgO barrier: The effect of Ar pressure on tunnel magnetoresistance and resistance area product // J. Appl. Phys. 2012. V. 111. P. 033903-1-033903-5.
3. Worledge D., Trouilloud D. L. Magnetoresistance measurements of unpatterned magnetic tunnel junction wafers by Current In-Plane Tunneling // App. Phys. Lett. 2003. V. 83 P. 84–86.
4. Trushin O., Simakin S., Vasiliev S.. Depth profiling of magnetic tunneling junction using ION TOF // Trudy XXIII mezhdunarodnoj konferentsii “Vzaimodejstvie ionov s poverkhnost'yu”. VIP2017, Moskva 21–25 avgusta 2017. T. 2. S. 34–36.