The simulation of the electron-phonon interaction in silicon

The processes of charge transfer in semiconductors are considered. The model is constructed on the basis of quantum kinetic equations for the distribution functions of conduction electrons and holes of the valence band in the phase space of coordinates and quasimomenta. Scattering of charge carriers is modeled by the statistical particle method. The basic processes of electron scattering by lattice nonidealities are considered. The calculations of the electron drift velocity in pure and doped silicon are presented.

Keywords

kinetic equations, particle method, scattering frequency, drift velocity

Acknowledgment

This work was supported by the Russian Foundation for Basic Research, project 17-01-00301 A.

Received

10.11.2018

Publication date

30.11.2018

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GOST	Berezin A., Volkov Y., Markov M., Tarakanov I. The simulation of the electron-phonon interaction in silicon // Matematicheskoe modelirovanie – 2018. – V. 30. – Number 12 C. 3-16 [Electronic resource]. URL: http://ras.jes.su/mmod/s207987840001164-9-1-en (circulation date: 31.07.2024). DOI: 10.31857/S023408790001933-0
MLA	Berezin, A., Volkov, Yu, Markov, M., Tarakanov, I. "The simulation of the electron-phonon interaction in silicon." Matematicheskoe modelirovanie 30.12 (2018):3-16. DOI: 10.31857/S023408790001933-0
APA	Berezin A., Volkov Y., Markov M., Tarakanov I. (2018). The simulation of the electron-phonon interaction in silicon. Matematicheskoe modelirovanie 30(12), pp.3-16 DOI: 10.31857/S023408790001933-0

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