The simulation of the electron-phonon interaction in silicon

 
PIIS023408790001933-0-1
DOI10.31857/S023408790001933-0
Publication type Article
Status Published
Authors
Affiliation: Keldysh Institute of Applied Mathematics of RAS
Address: Russian Federation
Affiliation: Keldysh Institute of Applied Mathematics of RAS
Address: Russian Federation
Affiliation: Keldysh Institute of Applied Mathematics of RAS
Address: Russian Federation
Affiliation: Keldysh Institute of Applied Mathematics of RAS
Address: Russian Federation
Journal nameMatematicheskoe modelirovanie
EditionVolume 30 Number 12
Pages3-16
Abstract

The processes of charge transfer in semiconductors are considered. The model is constructed on the basis of quantum kinetic equations for the distribution functions of conduction electrons and holes of the valence band in the phase space of coordinates and quasimomenta. Scattering of charge carriers is modeled by the statistical particle method. The basic processes of electron scattering by lattice nonidealities are considered. The calculations of the electron drift velocity in pure and doped silicon are presented.

Keywordskinetic equations, particle method, scattering frequency, drift velocity
AcknowledgmentThis work was supported by the Russian Foundation for Basic Research, project 17-01-00301 A.
Received10.11.2018
Publication date30.11.2018
Cite   Download pdf To download PDF you should sign in
Размещенный ниже текст является ознакомительной версией и может не соответствовать печатной

views: 1225

Readers community rating: votes 0

1. A.I. Ansel'm. Vvedenie v teoriyu poluprovodnikov. M.: Nauka, 1978, 616 s.

2. M.V. Fischetti, W.G .Vandenberghe. Edvanced Physics of Electron. Transport in Semiconductors and Nanostructures. Springer, 2016, 474 p.

3. P. Yu, M. Cardona. Fundamentals of Semiconductors. Springer Science & Business Media, 2010, 795p.

4. R. Khokni, Dzh. Istvud. Chislennoe modelirovanie metodom chastits. M.: Mir. 1987, 638s.

5. M.V. Fischetti. Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures // IEEE Trans. Electron Devices. 1991, v.38, p.634.

6. X. Wang, V. Chandarmouli, C.M. Mazar, A.F. Tasch. Simulation program suitable for hot carrier studies: An efficient multiband Monte Carlo model using both full and analytic band structure description for silicon // J. Appl. Phys. 1993, v.73, p.3339.

7. C. Jacoboni, L. Reggiani. The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials // Rev. Mod. Phys., 1983, v.55 (3), p.645.

8. M.V. Fischetti. Monte Carlo solution to the problem of high-field electron heating in SiO2 // Phys. Rev. Letters, 1984, v.53, p.1755-1758.

9. M.V. Fischetti., S.E. Laux. Monte Carlo analysis of electron transport in small semiconductor devices including band structure and space-charge effects // Phys. Rev. B., 1988, v.38, p.9721-9745.

10. H.A. Bannov, V.I. Ryzhij, Yu.A. Volkov. Metody makrochastits v matematicheskom modelirovanii ehlementov integral'nykh skhem // Mikroehlektronika. 1987, t.16, №3, s.210-219.

11. T. Kunikiyo, M. Takenaka, Y. Kamakura, M. Yamaji, H. Mizuno. A Monte Carlo simulation of anisotropic electron transport in silicon including full band structure and anisotropic impact ionization model // J. Appl. Phys. 1995, v.75, p.297-312.

12. A.I. Chumakov. Dejstvie kosmicheskoj radiatsii na integral'nye skhemy. – M.: Radio i svyaz', 2004, 319 s.

13. A.I. Chumakov. Vzaimodejstvie ioniziruyuschikh izluchenij s veschestvom // Radiatsionnaya stojkost' izdelij EhKB / Red. Chumakov A.I.  M.: NIYaU MIFI, 2015, 512 s.

14. A.V. Berezin, A.S. Vorontsov, M.E. Zhukovskij, M.B. Markov, S.V. Parot'kin. Metod chastits dlya ehlektronov v rasseivayuschej srede // ZhVM i MF, 2015, t.55, № 9, s.1566-1578.

15. E. Sonwell, V.F. Weisskopf. Theory of impurity scattering in semiconductors // Phys. Rev., 1950, v.77, p.388.

16. I.M. Sobol'. Chislennye metody Monte-Karlo.  M.: Nauka, 1973, 312 s.

17. S.K. Godunov, T.Yu. Mikhajlova. Predstavleniya gruppy vraschenij i sfericheskie funktsii.  Novosibirsk: Nauchnaya kniga, 1998, 197 s.

18. B.M. Smirnov. Kinetika ehlektronov v gazakh i kondensirovannykh sistemakh // UFN, 2002, t.172, s.1411-1447.

19. C. Canali, C. Jacobini, F. Nava, G. Ottavini, A.A. Quaranta. Electron drift velocity in silicon // Phys. Rev., 1975, v.12, p.2265.

Система Orphus

Loading...
Up