Single-chip receiving module with built-in antenna for the frequency range 66–67 GHz for 5G communication systems

 
PIIS086858860002809-1-1
DOI
Publication type Article
Status Published
Authors
Affiliation: Institute of Superhigh-Frequency Semiconductor Electronics (ISVCHPE) RAS
Address: Russian Federation
Affiliation: Institute of Superhigh-Frequency Semiconductor Electronics (ISVCHPE) RAS
Address: Russian Federation
Affiliation: Institute of Superhigh-Frequency Semiconductor Electronics (ISVCHPE) RAS
Address: Russian Federation
Affiliation: Institute of Superhigh-Frequency Semiconductor Electronics (ISVCHPE) RAS
Address: Russian Federation
Affiliation: Institute of Superhigh-Frequency Semiconductor Electronics (ISVCHPE) RAS
Address: Russian Federation
Affiliation: Institute of Superhigh-Frequency Semiconductor Electronics (ISVCHPE) RAS
Address: Russian Federation
Journal nameNauchnoe priborostroenie
EditionVolume 28 Issue 4
Pages23-29
Abstract

The work dedicated to design and research of a single-chip receiving module with an integrated antenna. Module is based on GaN HEMT technology on sapphire substrates. It is designed to work in the 66-67 GHz band and can be used for 5G communication systems. The measurements showed its operability in the range of 66-67 GHz, achievement output power more than 10 dBm and the tuning range of the VCO is more than 2 GHz.

KeywordsGaN, HEMT, transceiver, receiver, system-on-chip, oscillator, low-noise amplifier, antenna
Received02.12.2018
Publication date03.12.2018
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