Giant Increase in the Electrical Conductivity of High Resistive Film MoS2 Semiconductor upon Continuous Protons Injection

 
PIIS086956520001593-5-1
DOI10.31857/S086956520001191-3
Publication type Article
Status Published
Authors
Affiliation: Baikov Institute of Metallurgy and Materials Sciences, Russian Academy of Sciences
Affiliation: Prokhorov Institute of General Physics, Russian Academy of Sciences
Affiliation: Baikov Institute of Metallurgy and Materials Sciences, Russian Academy of Sciences
Journal nameDoklady Akademii nauk
EditionVolume 481 Issue 2
Pages141-144
Abstract

   

KeywordsIon source, hydrogen ions, protons, semiconductor, electrical conductivity, thin films
Received12.10.2018
Publication date14.10.2018
Number of characters536
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